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CS2N65F A9, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard.
CS4N65F A9HDY, the silicon N-channel EnhancedVDMOSFETs, is obtained by the self-aligned planar Technologywhich reduce the conduction loss, improve switchingperformance and enhance the avalanche energy. The transistorcan be used in various power switching circuit for systemminiaturization and higher efficiency. The package form isTO-220F, which accords with the RoHS standard.
?  Fast Switching?  ESD Improved Capability?  Low Gate Charge (Typical Data:28nC)?  Low Reverse transfer capacitances (Typical:17pF)?  100% Single Pulse avalanche energy Test
Fast Switching?  Low ON Resistance( Rdson ≤1.9? )?  Low Gate Charge ( Typical Data:19nC )?  Low Reverse transfer capacitances (Typical:7pF)?  100% Single Pulse avalanche energy Test