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? N-Channel ? ESD improved Capability ? Depletion Mode ? dv/dt rated ? Pb-free lead plating;ROHS compliant ? Halogen Free
CS1N60 A1H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-92, which accords with the RoHS standard.
CS7N60 A8HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard.
?  Fast Switching?  Low ON Resistance( Rdson ≤4.8? )?  Low Gate Charge ( Typical Data:18nC )?  Low Reverse transfer capacitances (Typical:7pF)?  100% Single Pulse avalanche energy Test
Features :?  Fast Switching?  Low ON Resistance (Rdso n ≤15?)?  Low Gate Charge (Typical Data:4nC)?  Low Reverse transfer capacitances (Typical:2.6pF)?  100% Single Pulse avalanche energy Test